A study of the impact of radiation exposure on the uniformity of large CsI(Tl) crystals for the BaBar detector

被引：1
|
作者：
Hryn'ova, T [1 ]
Kim, P [1 ]
Kocian, M [1 ]
Perl, M [1 ]
Rogers, H [1 ]
Schindler, RH [1 ]
Wisniewski, WJ [1 ]
机构：
[1] Stanford Linear Accelerator Ctr, Menlo Pk, CA 94025 USA
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2004年 / 535卷 / 1-2期
关键词：
BaBar; CsI(Tl); radiation damage;
D O I：
10.1016/j.nima.2004.07.268
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
We describe an apparatus that allows simultaneous exposure of large CsI(Tl) crystals to ionizing radiation and precise measurement of the longitudinal changes in light yield of the crystals. We present herein the results from this device for exposures up to 10 krad. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：452 / 456
页数：5
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