Digital Baseband Predistortion of Wideband Power Amplifiers with Improved Memory Effects

被引:0
|
作者
Bondar, D. [1 ]
Budimir, D. [1 ]
机构
[1] Univ Westminster, Wireless Commun Res Grp, London W1W 6UW, England
关键词
Digital baseband predistortion; iterative injection; memory effects; equalization; 3RD-ORDER; MICROWAVE;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A new digital baseband predistortion of wideband power amplifiers with improved memory effects is presented and investigated. Distortion compensation is increased by implementing proposed iterative digital baseband injection technique. Frequency-domain equalization in baseband is developed to minimize memory effects. The non-linear and memory parts of the proposed linearizer are implemented in baseband without additional feedback loop. The spectral regrowth improvement of 20 dB for a 5-MHz 16-QAM signal and a 10 dB reduction of 8 MHz offset adjacent channel power ratio (ACPR) are achieved. Experimental results are presented to validate the argument.
引用
收藏
页码:275 / 278
页数:4
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