Classical and quantum transport in focused-ion-beam-deposited Pt nanointerconnects

被引：86
|
作者：
Lin, JF [1 ]
Bird, JP
Rotkina, L
Bennett, PA
机构：
[1] Arizona State Univ, Dept Elect Engn, Nanostruct Res Grp, Tempe, AZ 85287 USA
[2] Univ Illinois, Beckman Inst Adv Sci & Technol, Urbana, IL 61801 USA
[3] Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA
来源：
APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 05期
关键词：
D O I：
10.1063/1.1541940
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We study the electrical properties of Pt nanointerconnects, formed on SiO2 substrates by focused-ion-beam deposition. Studies of their temperature-dependent resistivity reveal a small residual-resistivity ratio, and a Debye temperature that differs significantly from that of pure Pt, indicative of the disordered nature of the nanowires. Their magnetoresistance shows evidence for weak antilocalization at temperatures below 10 K, with a phase-breaking length of similar to100 nm, and a temperature dependence suggestive of quasi-one-dimensional interference. (C) 2003 American Institute of Physics.
引用
收藏
页码：802 / 804
页数：3
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