Large-grained and Highly-ordered Graphene Synthesized by Radio frequency Plasma-enhanced Chemical Vapor Deposition

被引：12

作者：

Woo, Yunsung ^{[1
]}

Kim, Dong-Chul ^{[1
]}

Jeon, Dae-Young ^{[1
]}

Chung, Hyun-Jong ^{[1
]}

Shin, Sung-Mo ^{[1
]}

Li, Xiang-Shu ^{[2
]}

Kwon, Young-Nam ^{[2
]}

Seo, David H. ^{[3
]}

Shin, Jaikwang ^{[1
]}

Chung, U-In ^{[1
]}

Seo, Sunae ^{[1
]}

机构：

[1] Samsung Elect Co Ltd, Magnet Device Grp, Semicond Device Lab, Corp Technol Operat SAIT, San 14-1, Yongin 446712, Gyeonggi Do, South Korea

[2] Samsung Elect Co Ltd, Corp Technol Operat SAIT, Analyt Engn Grp, Yongin 446712, Gyeonggi, South Korea

[3] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

来源：

GRAPHENE AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS | 2009年 / 19卷 / 05期

关键词：

D O I：

10.1149/1.3119534

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We have synthesized very thin graphite film on Ni foil using radio frequency chemical vapor deposition at relatively low temperature. Structural analysis revealed that the graphite film consists of large grain over tens of microns and highly ordered Bernal stacking. Accordingly, the carrier mobility of monolayer of RF-PECVD grown graphene is measured to be high as 4,500 cm(2)/Vs at room temperature, which is higher than any reported value of CVD grown graphene.

引用

页码：111 / +

页数：2

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