Electrical and optical properties of vanadium dioxide thin film at phase transition

被引：1
|
作者：
Yang Wei [1 ]
Liang Ji-Ran [1 ,2 ]
Ji Yang [1 ]
Liu Jian [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
[2] Tianjin Univ, Sch Elect & Informat Engn, Tianjin 300072, Peoples R China
来源：
JOURNAL OF INFRARED AND MILLIMETER WAVES | 2014年 / 33卷 / 04期
基金：
中国国家自然科学基金;
关键词：
vanadium oxide film; electrical method; optical method; simultaneous measurement; reflectivity; INSULATOR-TRANSITION;
D O I：
10.3724/SP.J.1010.2014.00426
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Vanadium oxide thin film was deposited on sapphire by RF magnetron sputtering. The XRD measurement result shows that the thin film is mainly composed of polycrystalline vanadium dioxide. The resistance of the thin film and its optical reflectivity at five different wavelengths were measured simultaneously during the semiconductor-metal phase transition. While both resistance and reflectivity measurements show reproducible hysteresis loops, they have quite different appearance. The optical phase transitions of VO2 at different points are almost the same, thus proving that the sample is uniform.
引用
收藏
页码：426 / 429
页数：4
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