Aerosol-jet-printed, high-speed, flexible thin-film transistor made using single-walled carbon nanotube solution

被引：88

作者：

Jones, Carissa S. ^{[1
]}

Lu, Xuejun ^{[2
]}

Renn, Mike ^{[3
]}

Stroder, Mike ^{[1
]}

Shih, Wu-Sheng ^{[1
]}

机构：

[1] Brewer Sci Inc, Rolla, MO 65401 USA

[2] Univ Massachusetts, Dept Elect & Comp Engn, Lowell, MA 01854 USA

[3] Optomec Inc, Albuquerque, NM 87109 USA

来源：

MICROELECTRONIC ENGINEERING | 2010年 / 87卷 / 03期

基金：

美国国家科学基金会;

关键词：

Single-walled carbon nanotube; Flexible thin-film transistor; Aerosol-jet; Printed device; PURIFICATION; GROWTH;

D O I：

10.1016/j.mee.2009.05.034

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-purity, surfactant-free and stable SWCNT aqueous solution was prepared using a series of chemical and physical processes. The SWCNT solution has a very limited amount of carbonaceous impurities, if any, and a total metal content of well below 500 ppb. It is stable for months without the addition of surfactant. Such SWCNT aqueous solution enables ink-jet printing of the entire fast, flexible SWCNT-based field-effect thin-film transistor (FE-TFT) at room temperature without the engagement of any traditional dry or wet chemical processes used for fabricating silicon-based transistors. High-speed SWCNT-based flexible FE-TFTs were printed using Aerosol Jet (R) printing technology. The printed flexible FE-TFTs were characterized to have a current ON-OFF ratio of greater than 130 with an operation frequency of greater than 5 GHz. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：434 / 437

页数：4

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