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Evidence for Strain-Induced Ferroelectric Order in Epitaxial Thin-Film KTaO3
被引:75
|作者:
Tyunina, M.
[1
]
Narkilahti, J.
[1
]
Plekh, M.
[1
]
Oja, R.
[2
]
Nieminen, R. M.
[2
]
Dejneka, A.
[3
]
Trepakov, V.
[3
,4
]
机构:
[1] Univ Oulu, Microelect & Mat Phys Labs, FI-90014 Oulu, Finland
[2] Aalto Univ, Sch Sci & Technol, COMP Appl Phys, FI-00076 Aalto, Finland
[3] Acad Sci Czech Republ, Inst Phys, Prague 18221 8, Czech Republic
[4] RAS, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
基金:
芬兰科学院;
关键词:
ENHANCEMENT;
DYNAMICS;
BEHAVIOR;
RELAXOR;
D O I:
10.1103/PhysRevLett.104.227601
中图分类号:
O4 [物理学];
学科分类号:
0702 ;
摘要:
In perovskite-structure epitaxial films, it has been theoretically predicted that the polarization and the coherence of polar order can increase with increasing crystallographic strain. Experimental evidence of strain-induced long-range ferroelectric order has not been obtained thus far, posing the fundamental question of whether or not strain can induce the long-range polar order. Here we demonstrate the existence of strain-induced ferroelectric order in quantum paraelectric KTaO3 by combining experimental investigations of epitaxial KTaO3 films and density-functional-theory calculations. The long-range ferroelectric order does exist under a large enough epitaxial strain. We suggest that a region of short-range polar order might appear between paraelectric and ferroelectric states in the strain-temperature phase diagrams.
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页数:4
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