Evidence for Strain-Induced Ferroelectric Order in Epitaxial Thin-Film KTaO3

被引:75
|
作者
Tyunina, M. [1 ]
Narkilahti, J. [1 ]
Plekh, M. [1 ]
Oja, R. [2 ]
Nieminen, R. M. [2 ]
Dejneka, A. [3 ]
Trepakov, V. [3 ,4 ]
机构
[1] Univ Oulu, Microelect & Mat Phys Labs, FI-90014 Oulu, Finland
[2] Aalto Univ, Sch Sci & Technol, COMP Appl Phys, FI-00076 Aalto, Finland
[3] Acad Sci Czech Republ, Inst Phys, Prague 18221 8, Czech Republic
[4] RAS, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
基金
芬兰科学院;
关键词
ENHANCEMENT; DYNAMICS; BEHAVIOR; RELAXOR;
D O I
10.1103/PhysRevLett.104.227601
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In perovskite-structure epitaxial films, it has been theoretically predicted that the polarization and the coherence of polar order can increase with increasing crystallographic strain. Experimental evidence of strain-induced long-range ferroelectric order has not been obtained thus far, posing the fundamental question of whether or not strain can induce the long-range polar order. Here we demonstrate the existence of strain-induced ferroelectric order in quantum paraelectric KTaO3 by combining experimental investigations of epitaxial KTaO3 films and density-functional-theory calculations. The long-range ferroelectric order does exist under a large enough epitaxial strain. We suggest that a region of short-range polar order might appear between paraelectric and ferroelectric states in the strain-temperature phase diagrams.
引用
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页数:4
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