Electron and hole trions in wide GaAs quantum wells

We study the photoluminescence lineshape of electron and hole trions as function of temperature both experimentally and theoretically. Trion spectra were measured in undoped high-quality GaAs quantum wells. Depending on the excitation energy, an excess hole or electron density is present in the quantum well. The optical response near the band edge is described within density matrix theory for the linear absorption regime. The calculated temperature-dependent asymmetric trion lineshape and the trion binding energy, found from a numerical solution of the trion Schrodinger equation, as well as its dependence on external electric fields are compared to experiments.