Sub 30nm Node Contact Hole Patterning Using Immersion Single Exposure with Negative Tone Development

被引：10
|
作者：
Kang, Seokho [1 ]
Reilly, Michael [1 ]
Penniman, Thomas [1 ]
Bell, Rosemary [1 ]
Spizuoco, Ken [1 ]
Joesten, Lori [1 ]
Bae, Young C. [1 ]
机构：
[1] Dow Chem Co USA, Dow Elect Mat, Marlborough, MA 01752 USA
来源：
JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY | 2010年 / 23卷 / 02期
关键词：
negative tone development; positive tone development; contact hole patterning; resolution; single exposure;
D O I：
10.2494/photopolymer.23.211
中图分类号：
O63 [高分子化学（高聚物）];
学科分类号：
070305 ; 080501 ; 081704 ;
摘要：
Contact hole patterning for 22nm node and beyond has become much more challenging. Since extreme ultraviolet lithography (EUV) is not yet ready, double patterning (DP) technology seems to be the most likely solution to achieve minimum half pitch of 40nm and below using immersion ArF lithography. The negative tone development (NTD) technique having excellent image contrast has received considerable attention as a possible alternative because it doesn't have the cost and throughput concerns that double patterning has. In this paper, we describe simulation and lithographic performance comparing single exposure (SE) negative tone development (NTD) technique with single exposure (SE) positive tone development (PTD) technique in terms of resolution through pitch.
引用
收藏
页码：211 / 215
页数：5
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