Body-Biased Complementary Logic Implemented Using AlN Piezoelectric MEMS Switches

被引：0
|
作者：
Sinha, Nipun [1 ]
Jones, Timothy S. [2 ]
Guo, Zhijun [3 ]
Piazza, Gianluca [4 ]
机构：
[1] Intel Corp, Hillsboro, OR 97124 USA
[2] Univ Pennsylvania, Philadelphia, PA 19130 USA
[3] Akustica Inc, Pittsburgh, PA 15203 USA
[4] Carnegie Mellon Univ, Pittsburgh, PA 15232 USA
来源：
2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING | 2009年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reports on the first implementation of low voltage complementary logic (< 1.5 V) by using body-biased aluminum nitride (AlN) piezoelectric MEMS switches. For the first time, by using opposite body biases the same mechanical switch has been made to operate as both an n-type and p-type (complementary) device. Body-biasing also gives the ability to precisely tune the threshold voltage of a switch. The AlN MEMS switches have shown extremely small subthreshold slopes and threshold voltages as low as 0.8 mV/dec and 30 mV, respectively. Furthermore, this work presents a fully mechanical body-biased inverter formed by two AlN MEMS switches operating at 100 Hz with a +/- 1.5 V voltage swing.
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页码：761 / +
页数：3
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