Electronic properties of stacks of graphene layers

被引：57
|
作者：
Guinea, F. [1 ]
Castro Neto, A. H.
Peres, N. M. R.
机构：
[1] CSIC, Inst Ciencia Mat, E-28029 Madrid, Spain
[2] Boston Univ, Dept Phys, Boston, MA 02215 USA
[3] Univ Minho, Ctr Phys, P-4710057 Braga, Portugal
[4] Univ Minho, Dept Fis, P-4710057 Braga, Portugal
来源：
SOLID STATE COMMUNICATIONS | 2007年 / 143卷 / 1-2期
关键词：
surfaces and interfaces; crystal structure and symmetry; electronic states (localized);
D O I：
10.1016/j.ssc.2007.03.053
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The electronic properties of stacks of graphene layers are reviewed. The Landau levels, and the role of stacking disorder are considered. Electron-electron interactions are also analysed, and it is shown that, near the neutrality point, they can change significantly the ground state properties. The screening of external fields, and the charge distribution among the different planes, is determined by interaction effects and interlayer hopping, leading to Friedel-like oscillations. (c) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码：116 / 122
页数：7
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