Overview of Resistive Switching Memory (RRAM) Switching Mechanism and Device Modeling

被引：0
|
作者：
Yu, Shimeng [1 ]
机构：
[1] Arizona State Univ, Sch Comp Informat & Decis Syst Engn, Tempe, AZ 85281 USA
来源：
2014 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS) | 2014年
关键词：
resistive switching; RRAM; mechanism; modeling;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, the recent progress on the understandings of the switching mechanisms in oxide resistive switching memory (RRAM) is reviewed. Several representative device modeling approaches including numerical discretized models, numerical continuous models and analytical compact models are discussed using HfOx bipolar RRAM as a model system. The future challenges of RRAM modeling are finally discussed.
引用
收藏
页码：2017 / 2020
页数：4
相关论文
共 50 条
  • [1] Revelation of resistive switching mechanism in AlOx based RRAM device
    Fu, Liping
    Liu, Hengyi
    Fan, Xiaolong
    Li, Yingtao
    [J]. PHYSICA SCRIPTA, 2023, 98 (09)
  • [2] Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications
    Zahoor, Furqan
    Azni Zulkifli, Tun Zainal
    Khanday, Farooq Ahmad
    [J]. NANOSCALE RESEARCH LETTERS, 2020, 15 (01):
  • [3] Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications
    Furqan Zahoor
    Tun Zainal Azni Zulkifli
    Farooq Ahmad Khanday
    [J]. Nanoscale Research Letters, 15
  • [4] Influence of defects on the resistive switching mechanism of RRAM
    Yang, Jin
    Dai, Yue-Hua
    Xu, Tai-Long
    Jiang, Xian-Wei
    Xu, Hui-Fang
    Li, Jin-Long
    Luo, Jing
    Chen, Jun-Ning
    [J]. Gongneng Cailiao/Journal of Functional Materials, 2013, 44 (17): : 2481 - 2485
  • [5] Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides
    Li, Tan-Yi
    Wang, Da-Wei
    Du, Sichao
    Chen, Wenchao
    Yin, Wen-Yan
    [J]. PROCEEDINGS OF THE 2020 IEEE INTERNATIONAL CONFERENCE ON COMPUTATIONAL ELECTROMAGNETICS (ICCEM 2020), 2020, : 27 - 28
  • [6] Analysis on switching mechanism of graphene oxide resistive memory device
    Hong, Seul Ki
    Kim, Ji Eun
    Kim, Sang Ouk
    Cho, Byung Jin
    [J]. JOURNAL OF APPLIED PHYSICS, 2011, 110 (04)
  • [7] Device Simulation and Modeling of RRAM Switching Processes
    Yu, Zhiping
    Zhang, Jinyu
    [J]. 7TH IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC) 2016, 2016,
  • [8] Effects Of stress on resistive switching property of the NiO RRAM device
    Ma, Guokun
    Tang, Xiaoli
    Zhang, Huaiwu
    Zhong, Zhiyong
    Li, Jie
    Su, Hua
    [J]. MICROELECTRONIC ENGINEERING, 2015, 139 : 43 - 47
  • [9] Analytical Modeling of Current Overshoot in Oxide-Based Resistive Switching Memory (RRAM)
    Ambrogio, Stefano
    Milo, Valerio
    Wang, ZhongQiang
    Balatti, Simone
    Ielmini, Daniele
    [J]. IEEE ELECTRON DEVICE LETTERS, 2016, 37 (10) : 1268 - 1271
  • [10] The role of Al atoms in resistive switching for Al/ZnO/Pt Resistive Random Access Memory (RRAM) device
    Han, Seung Woo
    Park, Chul Jin
    Shin, Moo Whan
    [J]. SURFACES AND INTERFACES, 2022, 31
12345