Near-threshold relaxation dynamics of a quantum dot laser

被引:0
|
作者
Wang, Cheng [1 ,2 ]
Even, Jacky [1 ]
Grillot, Frederic [2 ]
机构
[1] Univ Europeenne Bretagne, INSA, CNRS FOTON, 20 Ave Buttes Coesmes, F-35708 Rennes 7, France
[2] Ecole Natl Super Telecommun Bretagne, CNRS LTCI, Telecom Paristech, F-75013 Paris, France
关键词
semiconductor laser; quantum dot; modulation dynamics; SEMICONDUCTOR-LASERS; CARRIER RELAXATION; FREQUENCY; GAIN;
D O I
10.1117/12.2048996
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The near-threshold dynamics of a QD and a commercial QW laser are investigated both experimentally and theoretically. Below threshold, the resonance frequency and damping factor of the QD laser exhibit a different behaviour as compared to the QW counterpart. In the near-threshold regime, the intra-dot carrier relaxation is predicted from an empirical pair-states model to have a strong impact on the QD laser's modulation dynamics. The widespread of experimental values for the damping factor reported in the literature for QD lasers is a further indication that this empirical approach is pushed to the limits in this situation. More accurate microscopic modelling should rely on a separation of electron and hole dynamics.
引用
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页数:9
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