Efficiency enhancement of a Sb2Se3 solar cell after adding a Si3N4 interface layer

被引：7

作者：

Feng, Zhengdong ^{[1
]}

Liu, Jingjing ^{[2
]}

Su, Jian ^{[1
]}

Tian, Huijun ^{[1
]}

Guo, Huafei ^{[1
]}

Zhang, Shuai ^{[2
]}

Qiu, Jianhua ^{[1
]}

Yuan, Ningyi ^{[2
]}

Ding, Jianning ^{[3
]}

机构：

[1] Changzhou Univ, Sch Microelect & Control Engn, Jiangsu Collaborat Innovat Ctr Photovolta Sci & E, Jiangsu Prov Cultivat Base State Key Lab Photovol, Changzhou 213164, Jiangsu, Peoples R China

[2] Changzhou Univ, Sch Mat Sci & Engn, Changzhou 213164, Jiangsu, Peoples R China

[3] Jiangsu Univ, Inst Intelligent Flexible Mechatron, Zhenjiang 212013, Jiangsu, Peoples R China

来源：

MATERIALS LETTERS | 2022年 / 314卷

基金：

中国国家自然科学基金;

关键词：

Sb2Se3; Solar energy materials; Thin films; Si3N4; FILM;

D O I：

10.1016/j.matlet.2022.131796

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon nitride (Si3N4) is essential in the preparation of silicon cells, which can increase the absorption of light and play a passivation effect. Si3N4 has excellent thermal stability and chemical inertness, which can be used to improve the photoelectric performance of antimony selenide (Sb2Se3) thin film solar cells. In this study, cadmium sulfide (CdS) surface formed via chemical bath deposition was modified by magnetron sputtered Si3N4. The smoothed CdS surface significantly improved the fill fact and current density of the cell. The efficiency of the solar cell with a fluorine-doped tin oxide(FTO)/CdS/Si3N4 (1 nm)/Sb2Se3/Au structure reached 5.51%.

引用

页数：4

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