Influence of laser conditioning on defects of HfO2 monolayer films

被引:5
|
作者
Li, Xiao [1 ,2 ]
Zhao, Yuan'an [1 ]
Liu, Xiaofeng [1 ,2 ]
Shao, Jianda [1 ]
Fan, Zhengxiu [1 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab High Power Laser Mat, Shanghai 201800, Peoples R China
[2] Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China
关键词
INDUCED DAMAGE; THRESHOLD;
D O I
10.3788/COL20100806.0615
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The influence of laser conditioning on defects of HfO2 monolayer films prepared by electron beam evaporation (EBE) is investigated utilizing the spot-size effect of the laser-induced damage. It is found that the laser-induced damage threshold of HfO2 monolayer films can be increased by a factor of 1.3-1.6. It is also found that the defects with low threshold can be removed by laser conditioning and defects with higher threshold may be removed partially.
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页码:615 / 617
页数:3
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