High Mobility Field-Effect Thin Film Transistor Using Room-Temperature High-κ Gate Dielectrics

被引：16

作者：

Hsu, Hsiao-Hsuan ^{[1
]}

Chang, Chun-Yen ^{[1
]}

Cheng, Chun-Hu ^{[2
]}

Chen, Po-Chun ^{[1
]}

Chiu, Yu-Chien ^{[1
]}

Chiou, Ping ^{[1
]}

Cheng, Chin-Pao ^{[2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan

[2] Natl Taiwan Normal Univ, Dept Mechatron Technol, Taipei 10610, Taiwan

来源：

JOURNAL OF DISPLAY TECHNOLOGY | 2014年 / 10卷 / 10期

关键词：

Flexible; indium-gallium-zinc oxide (IGZO); thin-film transistor (TFT); room temperature; ZINC-OXIDE; DISPLAYS; STRESS;

D O I：

10.1109/JDT.2014.2331351

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports an InGaZnO thin-film transistor (TFT) that involves using fully room-temperature gate dielectrics on a flexible substrate. The wide bandgap dielectrics of HfO2 and Y2O3 exhibited favorable adhesion properties on a flexible substrate compared with conventional low-kappa SiO2 film. Based on the experimental results, the room-temperature IGZO/HfO TFTs demonstrated effective device integrity, and achieve a low drive voltage of < 2 V, a low threshold voltage of 0.46 +/- 006 V, a low sub-threshold swing of 110 +/- 6 mV/decade and an extremely high mobility of 60.2 +/- 32 cm(2)/V s. The excellent performance of this TFT indicated that it demonstrates considerable potential for active-matrix liquid crystal display applications requiring low power consumption and a high driving current.

引用

页码：847 / 853

页数：7

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