Anisotropy of resonant inelastic X-ray scattering at the K edge of Si:: Theoretical analysis

被引：3
|
作者：
Nisikawa, Y [1 ]
Usuda, M
Igarashi, J
机构：
[1] Japan Atom Energy Res Inst, Synchrotron Radiat Res Ctr, Sayo, Hyogo 6795148, Japan
[2] Ibaraki Univ, Fac Sci, Mito, Ibaraki 3108512, Japan
来源：
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 2004年 / 73卷 / 11期
关键词：
resonant inelastic X-ray scattering; K edge of Si;
D O I：
10.1143/JPSJ.73.3171
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We investigate theoretically the resonant inelastic X-ray scattering (RIXS) at the K edge of Si on the basis of an ab initio calculation. We calculate the RIXS spectra with systematically varying transfered-momenta, incident-photon energy and incident-photon polarization. We confirm the anisotropy of the experimental spectra by Y. Ma et al. [Phys. Rev. Lett. 74 (1995) 478], providing a quantitative explanation of the spectra.
引用
收藏
页码：3171 / 3176
页数：6
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