Degradation process in organic thin film devices fabricated using P3HT

被引：15
|
作者：
Rashmi [1 ]
Kapoor, Ashok K. [1 ]
Kumar, Upendra [1 ]
Balakrishnan, V. R. [1 ]
Basu, P. K. [1 ]
机构：
[1] Solid State Phys Lab, Delhi 110054, India
来源：
PRAMANA-JOURNAL OF PHYSICS | 2007年 / 68卷 / 03期
关键词：
poly(3-hexylthiophene); organic semiconductors; conducting polymers; degradation;
D O I：
10.1007/s12043-007-0052-2
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The stability of regioregular poly (3-hexylthiophene 2,5-diyl) (P3HT) thin films sandwiched between indium tin oxide (ITO) and aluminium (Al) electrodes have been investigated under normal environmental conditions (25 degrees C and R,H-45-50%). Electrical and optical properties of ITO/P3HT/Al devices have been studied over a period of 30 days. Mobility p of the order of 10(-4) cm(2)/V-s has been obtained from the V-2 law in the as-deposited P3HT films. Scanning electron microscopy (SEM) investigations show blistering of Al contacts in devices with a poly(3,4-ethylenedioxythiophene) (PEDOT) interlayer on application of voltage whereas no blistering is seen in devices without PEDOT. The results have been explained in terms of trap generation and propagation and the moisture-absorbing nature of PEDOT.
引用
收藏
页码：489 / 498
页数：10
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