Pure valley current generation in graphene with a Dirac gap by quantum pumping

被引:13
|
作者
Wang, Jing [1 ,2 ,3 ,4 ,5 ,6 ]
Lin, Zijing [2 ,3 ]
Chan, Kwok Sum [4 ,5 ,6 ]
机构
[1] Hangzhou Dianzi Univ, Key Lab RF Circuits & Syst, Minist Educ China, Hangzhou 310018, Zhejiang, Peoples R China
[2] Univ Sci & Technol China, Dept Phys, Hefei 230026, Peoples R China
[3] Univ Sci & Technol China, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Hefei 230026, Peoples R China
[4] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China
[5] USTC, CityU Joint Adv Res Ctr, Suzhou, Peoples R China
[6] City Univ Hong Kong, Shenzhen Res Inst, Shenzhen 518057, Peoples R China
关键词
ELECTRON PUMP; TRANSPORT;
D O I
10.7567/APEX.7.125102
中图分类号
O59 [应用物理学];
学科分类号
摘要
We studied the pure valley current generated by adiabatic quantum pumping in a monolayer graphene with a gap generated by a substrate. The generation of the quantum-pumped pure valley current requires the presence of the antiparallel magnetic fields of two magnetic strips and the electrical potential barriers of three metal gates. The Fabry-Perot resonances in the structure play an import role in the formation of the pumped current. By changing the amplitude of the ac voltage and the Fermi level, the pumped current can be modified. The proposed technique can have applications in the development of graphene valleytronic devices. (C) 2014 The Japan Society of Applied Physics
引用
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页数:4
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