Large-scale synthesis of gallium nitride nanosaws using a chemical vapor deposition method

被引：17
|
作者：
Bae, SY
Seo, HW
Park, J
Yang, HN
机构：
[1] Korea Univ, Dept Chem, Jochiwon 339700, South Korea
[2] Hanyang Univ, Coll Engn Sci, Ansan 425791, South Korea
来源：
CHEMICAL PHYSICS LETTERS | 2003年 / 373卷 / 5-6期
关键词：
D O I：
10.1016/S0009-2614(03)00671-7
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
A large quantity of GaN nanostructures (nanosaws) was produced by a chemical vapor deposition of Ga/Ga2O3/ B2O3 mixture under NH3 flow. All of them have a single-edged sawlike, configuration. The average width of the nanosaw is in the range 100 nm-1 mum and the thickness is about 1/10 of the average width. They consist of single-crystalline wurtzite structure With the [0 1 1] direction parallel to the long axis and the [0 0 1] direction perpendicular to the edge of saw teeth. The jagged edges are in an angle of 100degrees-110degrees. The room-temperature cathodoluminescence exhibits a strong band-edge emission at 3.46 eV. (C) 2003 Elsevier Science B.V. All rights reserved.
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收藏
页码：620 / 625
页数：6
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