Anisotropic spin relaxation induced by surface spin-orbit effects

被引:8
|
作者
Zhou, Chao [1 ]
Kandaz, Fatih [2 ]
Cai, Yunjiao [2 ]
Qin, Chuan [2 ]
Jia, Mengwen [1 ]
Yuan, Zhe [3 ,4 ]
Wu, Yizheng [1 ,5 ]
Ji, Yi [2 ]
机构
[1] Fudan Univ, State Key Lab Surface Phys, Dept Phys, Shanghai 200433, Peoples R China
[2] Univ Delaware, Dept Phys & Astron, Newark, DE 19716 USA
[3] Beijing Normal Univ, Ctr Adv Quantum Studies, Beijing 100875, Peoples R China
[4] Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China
[5] Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China
基金
美国国家科学基金会;
关键词
2-DIMENSIONAL ELECTRONS; ROOM-TEMPERATURE; ACCUMULATION; INJECTION; MAGNETIZATION; PRECESSION; VALVES; SEMICONDUCTORS; RESISTANCE;
D O I
10.1103/PhysRevB.96.094413
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
It is a commonperception that the transport of a spin current in polycrystallinemetal is isotropic and independent of the polarization direction, even though spin current is a tensorlike quantity and its polarization direction is a key variable. We demonstrate surprising anisotropic spin relaxation in mesoscopic polycrystalline Cu channels in nonlocal spin valves. For directions in the substrate plane, the spin-relaxation length is longer for spins parallel to the Cu channel than for spins perpendicular to it, by as much as 9% at 10 K. Spin-orbit effects on the surfaces of Cu channels can account for this anisotropic spin relaxation. The finding suggests novel tunability of spin current, not only by its polarization direction but also by electrostatic gating.
引用
收藏
页数:7
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