Transport properties of highly conductive n-type Al-rich AlxGa1-xN (x≥0.7)

被引：116

作者：

Nakarmi, ML ^{[1
]}

Kim, KH ^{[1
]}

Zhu, K ^{[1
]}

Lin, JY ^{[1
]}

Jiang, HX ^{[1
]}

机构：

[1] Kansas State Univ, Dept Phys, Manhattan, KS 66506 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 17期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.1809272

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report here the growth and transport studies of conductive n-type AlxGa1-xN alloys with high Al contents (xgreater than or equal to0.7). Si-doped AlxGa1-xN alloys were grown by metalorganic chemical vapor deposition on AlN-epilayer/sapphire substrates with very smooth surface. Low n-type resistivities have been obtained for Al-rich AlxGa1-xN alloys. The resistivity was observed to increase rapidly with increasing x due to the deepening of the Si donor energy level. Transport measurements have indicated that we have achieved n-type conduction in pure AlN. From the temperature dependence of the resistivity, the donor activation energy was estimated to vary from 23 to 180 meV as x was increased from 0.7 to 1.0. (C) 2004 American Institute of Physics.

引用

页码：3769 / 3771

页数：3

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