Zero-Bias Spin Separation in Quantum Wells

被引：0

作者：

Ganichev, S. D. ^{[1
]}

Bel'kov, V. V. ^{[1
,2
]}

Tarasenko, S. A. ^{[2
]}

Danilov, S. N. ^{[1
]}

Giglberger, S. ^{[1
]}

Hoffmann, Ch. ^{[1
]}

Ivchenko, E. L. ^{[2
]}

Weiss, D. ^{[1
]}

Gerl, C. ^{[1
]}

Schuh, D. ^{[1
]}

Wegscheider, W. ^{[1
]}

Prettl, W. ^{[1
]}

机构：

[1] Univ Regensburg, D-93040 Regensburg, Germany

[2] Russian Acad Sci, AF Ioffe Phys, Tech Inst, St Petersburg, Russia

来源：

CONFERENCE DIGEST OF THE 2006 JOINT 31ST INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES AND 14TH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS | 2006年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We show that in gyrotropic semiconductor structures spin-dependent asymmetry of electron scattering induce a pure spin current which, in contrast to the spin Hall effect, does not require an electric current to flow. The effect is observed in GaAs/AlGaAs quantum wells at free-carrier absorption of terahertz radiation in a wide range of temperatures from liquid helium up to room temperature. The results agree with the phenomenological description based on the symmetry. Experimental and theoretical analysis evidences unumbiguously that the observed photocurrents are spin-dependent and related to the gyrotropy of the low-dimensional structures. Microscopic theory of this effect based on asymmetry of photoexcitation and relaxation processes is developed being in a good agreement with experimental data.

引用

页码：34 / 34

页数：1

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