GaAs/GaNAs core-multishell nanowires with nitrogen composition exceeding 2%

被引：17
|
作者：
Yukimune, M. [1 ]
Fujiwara, R. [1 ]
Ikeda, H. [1 ]
Yano, K. [1 ]
Takada, K. [1 ]
Jansson, M. [2 ]
Chen, W. M. [2 ]
Buyanova, I. A. [2 ]
Ishikawa, F. [1 ]
机构：
[1] Ehime Univ, Grad Sch Sci & Engn, 3 Bunkyo Cho, Matsuyama, Ehime 7908577, Japan
[2] Linkoping Univ, Dept Phys Chem & Biol, S-58183 Linkoping, Sweden
来源：
APPLIED PHYSICS LETTERS | 2018年 / 113卷 / 01期
关键词：
SHELL NANOWIRES; GAAS NANOWIRES; GROWTH;
D O I：
10.1063/1.5029388
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the growth of GaAs/GaNAs/GaAs core-multishell nanowires having N compositions exceeding 2%. The structures were grown by plasma-assisted molecular beam epitaxy using constituent Ga-induced vapor-liquid-solid growth on Si(111) substrates. The GaNAs shell nominally contains 0%, 2%, and 3% nitrogen. The axial cross-sectional scanning transmission electron microscopy measurements confirm the existence of core-multishell structure. The room temperature micro-photoluminescence measurements reveal a red-shift of the detected emission with increasing N content in the nanowires, consistent with the expected changes in the GaNAs bandgap energy due to the bowing effect. Published by AIP Publishing.
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页数：5
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