Photonic Synaptic Transistor Based on P-Type Organic Semiconductor Blending With N-Type Organic Semiconductor

被引:21
|
作者
Lan, Shuqiong [1 ]
Ke, Yudan [2 ]
Chen, Huipeng [2 ]
机构
[1] Jimei Univ, Sch Sci, Dept Phys, Xiamen 361021, Peoples R China
[2] Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China
基金
中国国家自然科学基金;
关键词
Transistors; Photonics; Synapses; Semiconductor device measurement; Biology; Organic semiconductors; Artificial intelligence; Photonic synapses; organic field-effect transistors; organic semiconductors; blends; RESISTIVE SWITCHING MEMORY; NETWORKS; DEVICE;
D O I
10.1109/LED.2021.3090906
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Neuromorphic computing, with information sensing, processing, and storage capabilities, is driving the development of a new generation of artificial intelligence (AI). Photonic synaptic devices are essential components for improving information processing efficiency owing to their advantages of a high propagation speed, low latency, and large bandwidth. In this study, a photonic synaptic transistor simply based on p-type organic semiconductor blending with n-type organic semiconductor was fabricated via simple solution process in which only light was used to control the enhancement and inhibition of the synaptic conductance. The device can simulate fundamental synaptic properties. Additionally, the coordination between light stimulation and electrical stimulation was investigated, and the results show that light-pulse stimulation is beneficial for increasing the response current simulated by electrical pulses. This work represents a significant step towards the realization of high-efficiency AI electronics.
引用
收藏
页码:1180 / 1183
页数:4
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