Resonant excitation of Er ion luminescence in a nanocrystalline silicon matrix

被引：6
|
作者：
García, JA
Plugaru, R
Méndez, B
Piqueras, J
Tate, TJ
机构：
[1] Univ Basque Country, Dept Fis Aplicada 2, Lejona, Vizcaya, Spain
[2] Univ Complutense Madrid, Fac Ciencias Fis, Dept Fis Mat, E-28040 Madrid, Spain
[3] Univ London Imperial Coll Sci Technol & Med, Dept Elect & Elect Engn, London, England
来源：
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS | 2004年 / 27卷 / 1-3期
关键词：
D O I：
10.1051/epjap:2004083
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The luminescence of amorphous silicon layers either implanted with Er or co-implanted with Er and O has been studied by photoluminescence (PL) and cathodoluminescence (CL) in the scanning electron microscope. Annealing in nitrogen causes the formation of oxide species and Er-Si complexes or precipitates as well a spectral changes in the visible and infrared ranges. The main CL emission takes place in the visible range while PL spectra reveal intense visible and infrared emission. CL spectra show blue-violet, or green, emission bands whose relative intensities depend on the post-implantation annealing temperature. The PL spectra show a blue-violet band with a series of lines in the violet region related to phonon assisted transitions as well as different emission bands in the range 1200-1500 nm. The influence of the annealing-induced structural changes on the observed spectra is discussed.
引用
收藏
页码：75 / 79
页数：5
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