Filed emission characterizes of size-controllable Si nanopillar arrays

被引:1
|
作者
Li, W. [1 ]
机构
[1] Nanjing Univ Posts & Telecommun, Coll Elect Sci & Engn, Nanjing 210003, Peoples R China
来源
关键词
FIELD-EMISSION; ELECTRON-EMISSION;
D O I
10.1051/epjap/2010094
中图分类号
O59 [应用物理学];
学科分类号
摘要
Here, large-scale ordered periodic silicon pillar arrays were prepared using nanosphere lithography. And, the diameter and the density of nanopillar arrays are determined by the initial diameter of polystyrene (PS) spheres. In our experiment, the nanopillar has a diameter of approximately 50 nm, and the density of silicon pillar is 6x10(9)/cm(2). This array shows a field emission property with a low turn-on field of 9.8 V mu m(-1) at a current density of 10 mu A cm(-2). And the field enhancement factor is about 560. The Fowler-Nordheim plot obtained is linearly dependent, indicating that the emission current arises from the F-N tunnelling effect.
引用
收藏
页码:20601 / p1
页数:4
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