Adhesion of diamond film to Co-deficient cemented tungsten carbide substrate

被引:0
|
作者
Li, Honglin [1 ]
Gou, Li [1 ]
Ran, Junguo [1 ]
机构
[1] Sichuan Univ, Dept Inorgan Mat, Chengdu 610065, Peoples R China
来源
基金
中国国家自然科学基金;
关键词
diamond film; tungsten carbide; chemical vapor deposition (CVD);
D O I
10.4028/www.scientific.net/KEM.336-338.1728
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Diamond film was synthesized on Co-deficient (Co content is about 0.5%) WC-Co substrate using microwave plasma chemical vapor deposition (MPCVD) equipment without special pretreatment. SEM, XRD, Rockwell-indentation test and scratch test were used to analyze the structure and morphology of the diamond film and its adhesion to the substrate. Co content was also measured by EDAX. The results show that the film synthesized is of ideal diamond structure with perfect and uniform grains, dense and continuous surface and strong adhesion. Co content on the surface of the substrate is about 0.8% after 20h deposition, which is considered as one of the main causes to get good adhesion.
引用
收藏
页码:1728 / 1730
页数:3
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