Full CMOS Implementation of Bidirectional Associative Memory Neural Network with Analog Memristive Synapse

被引:7
|
作者
Vohra, Sahibia Kaur [1 ]
Thomas, Sherin [1 ]
Sakare, Mahendra [1 ]
Das, Devarshi Mrinal [1 ]
机构
[1] Indian Inst Technol, Dept Elect Engn, Ropar, India
关键词
Artificial neural networks; Bidirectional associative memory (BAM); Memristor; Memristor crossbar; Synaptic weight; CIRCUIT; ARRAY;
D O I
10.1109/MWSCAS47672.2021.9531865
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
Memristor is a computational and area efficient substitute for resistive synapse in neural networks as it provides tunable and non-volatile storage of synaptic weights. Full CMOS circuit realisation of a 6 x 6 Bidirectional Associative Memory (BAM) neural network with CMOS memristor synapse is implemented in this paper. To show the BAM neural network's ability to recall its pattern, we have taken the training set of three Tetris pattern pairs, and corresponding synapse weights are calculated using MATLAB. We have integrated the proposed tunable CMOS memristor emulator in the crossbar for storing the synaptic weights. The CMOS circuit implementation of the BAM neural network is validated with the simulation results in 0.18/mu m CMOS technology.
引用
收藏
页码:445 / 448
页数:4
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