Fabrication of boron-doped diamond ultramicroelectrodes for use in scanning electrochemical microscopy experiments

被引:32
|
作者
Holt, Katherine B.
Hu, Jingping
Foord, John S.
机构
[1] UCL, Dept Chem, London WC1H 0AJ, England
[2] Univ Oxford, Chem Res Lab, Oxford OX1 3TA, England
基金
英国工程与自然科学研究理事会;
关键词
D O I
10.1021/ac061995s
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Boron-doped diamond (BDD) ultramicroelectrode (UME) tips were fabricated by the growth of BDD films by chemical vapor deposition onto sharpened tungsten wires. Both nanocrystalline and microcrystalline forms of diamond coatings were examined. The diamond-coated wires were selectively insulated with nail varnish, electrophoretic paint, or fast-setting epoxy to form UME tips of critical dimensions of 1-25 mu m. The geometry of the exposed electrode area was disk or hemispherical in most cases. Cyclic voltammetry and chronoamperometry were used to assess exposed electrode area and integrity of the insulation. BDD UMEs were used to obtain SECM approach curves to an insulating and a conducting substrate, which were fitted to the theory appropriate for the observed tip geometry. The tips were used to obtain SECM images of immobilized respiring E. coli, illustrating the suitability of BDD UMEs for electrochemical imaging in biological media.
引用
收藏
页码:2556 / 2561
页数:6
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