Process window metrology

被引：15

作者：

Ausschnitt, CP ^{[1
]}

Chu, W ^{[1
]}

Hadel, H ^{[1
]}

Ho, H ^{[1
]}

Talvi, P ^{[1
]}

机构：

[1] IBM Corp, Semicond Res & Dev Ctr, Hopewell Junction, NY 12533 USA

来源：

METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XIV | 2000年 / 3998卷

关键词：

lithography control; process window; optical metrology; critical dimension;

D O I：

10.1117/12.386468

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper is the third of a series that defines a new approach to in-line lithography control. The first paper described the use of optically measurable line-shortening I Ih targets to enhance signal-to-noise and reduce measurement time.(1) The second described the dual-tone optical critical dimension (OCD) measurement and analysis necessary to distinguish dose and defocus.(2) Here we describe the marriage of dual-tone OCD to SEM-CD metrology that comprises what we call "process window metrology" (PWM), the means to locate each measured site in dose and focus space relative to the allowed process window. PWM provides in-line process tracking and control essential to the successful implementation of low-k lithography.

引用

页码：158 / 166

页数：9

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