Model and Observations of Dielectric Charge in Thermally Oxidized Silicon Resonators

被引：32

作者：

Bahl, Gaurav ^{[1
]}

Melamud, Renata ^{[2
]}

Kim, Bongsang ^{[3
]}

Chandorkar, Saurabh A. ^{[4
]}

Salvia, James C. ^{[1
]}

Hopcroft, Matthew A. ^{[3
]}

Elata, David ^{[5
]}

Hennessy, Robert G. ^{[1
]}

Candler, Rob N. ^{[6
]}

Howe, Roger T. ^{[1
]}

Kenny, Thomas W. ^{[4
]}

机构：

[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[2] SiTime Corp, Sunnyvale, CA 94085 USA

[3] Univ Calif Berkeley, Berkeley Sensor & Actuator Ctr, Berkeley, CA 94720 USA

[4] Stanford Univ, Dept Mech Engn, Stanford, CA 94305 USA

[5] Technion Israel Inst Technol, Mech Engn Microsyst Lab, Fac Mech Engn, IL-32000 Haifa, Israel

[6] Univ Calif Los Angeles, Sensors & Technol Lab, Los Angeles, CA 90095 USA

来源：

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS | 2010年 / 19卷 / 01期

基金：

美国国家科学基金会;

关键词：

Charging; dielectrics; frequency drift; reliability; resonators; silicon dioxide; BULK ACOUSTIC RESONATOR; TEMPERATURE; FREQUENCY;

D O I：

10.1109/JMEMS.2009.2036274

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper investigates the effects of dielectric charge on resonant frequency in thermally oxidized silicon resonators hermetically encapsulated using "epi-seal." SiO2 coatings are effective for passive temperature compensation of resonators but make the devices more susceptible to charging-related issues. We present a theoretical model for the electromechanical effects of charge trapped in the dielectrics within the transduction gap of a resonator. Observations of resonance frequency against varying resonator bias voltage are fitted to this model in order to obtain estimates for the magnitude of the trapped oxide charge. Statistics collected from wet- and dry-oxidized devices show that lower fixed oxide charge can be expected upon dry oxidation. In addition, observations of time-varying resonator frequency indicate the presence of mobile oxide charge in a series of voltage biasing and temperature experiments. [2009-0088]

引用

页码：162 / 174

页数：13

共 50 条

[1] ORIGIN OF FIXED CHARGE IN THERMALLY OXIDIZED SILICON
GORONKIN, H
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (02) : 314 - 317
[2] Origin of the Fixed Charge in Thermally Oxidized Silicon
Raider, S. L.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (12) : 1950 - 1950
[3] Thermally Oxidized LPCVD Silicon as Gate Dielectric on GaN
Sreenidhi, T.
DasGupta, Amitava
DasGupta, Nandita
2009 2ND INTERNATIONAL WORKSHOP ON ELECTRON DEVICES AND SEMICONDUCTOR TECHNOLOGY, 2009, : 130 - +
[4] SYMMETRY OF INTERFACE CHARGE DISTRIBUTION IN THERMALLY OXIDIZED SILICON
ABOWITZ, G
ARNOLD, E
LADELL, J
PHYSICAL REVIEW LETTERS, 1967, 18 (14) : 543 - +
[5] ORIENTATION DEPENDENCE OF BUILT-IN SURFACE CHARGE ON THERMALLY OXIDIZED SILICON
BALK, P
BURKHARD.PJ
GREGOR, LV
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (12): : 2133 - &
[6] CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON
DEAL, BE
SKLAR, M
GROVE, AS
SNOW, EH
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) : 266 - +
[7] STABLE AND UNSTABLE SURFACE-STATE CHARGE IN THERMALLY OXIDIZED SILICON
BREED, DJ
KRAMER, RP
SOLID-STATE ELECTRONICS, 1976, 19 (11) : 897 - 907
[8] Ordering in thermally oxidized silicon
Munkholm, A
Brennan, S
PHYSICAL REVIEW LETTERS, 2004, 93 (03) : 036106 - 1
[9] MODEL OF THE STRUCTURAL AND ELECTROPHYSICAL NONUNIFORMITY OF THERMALLY OXIDIZED SILICON LAYERS
ZAITSEV, NA
INORGANIC MATERIALS, 1984, 20 (12) : 1802 - 1805
[10] Adsorption Model of Organic Molecules on the Surface of Thermally Oxidized Silicon
Sato, Nobuyoshi
Shimogaki, Yukihiro
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2012, 1 (04) : N61 - N66

← 1 2 3 4 5 →