Reflectivity kinetics of saturable absorbers for laser mirrors

被引:2
|
作者
Rubtsova, N. N. [1 ]
Borisov, G. M. [1 ]
Gol'dort, V. G. [1 ]
Kovalyov, A. A. [1 ]
Ledovskikh, D. V. [1 ]
机构
[1] RAS, AV Rzhanov Inst Semicond Phys, Siberian Branch, Acad Lavrentyev Ave 13, Novosibirsk 630090, Russia
关键词
design of specific laser systems; mode locking; nondestructive optical testing; optical properties of nanoscale materials; quantum wells; YB3+/KY(WO4)(2) LASER; SEMICONDUCTOR; PULSES;
D O I
10.1088/1054-660X/26/2/025001
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The reflectivity kinetics of saturable absorbers based on semiconductor quantum wells was investigated with differential reflectivity Delta R/R = 10-5 accuracy by the pump probe technique for energy fluxes (0,27-5.40).1014 photons cm 2 using a femtosecond Yb3+:KY(WO4)(2) laser, Three kinds of saturable absorbers were investigated: absorbers based on multiple quantum wells with nano -structured barriers grown over a mirror; the same absorber grown over the substrate; absorbers on multiple quantum wells separated by thick barriers grown over the substrate, The substrate contribution gives a stationary background and a two -photon absorption peak for small probe delays, which complicates the kinetics of the samples grown over the substrate. For absorbers grown over the mirror two exponential decays with a short relaxation time tau(1)= 0.2-0.4 ps and with a long relaxation time tau(2) = 7.8 ps were obtained, The last relaxation time is remarkably shorter than in quantum wells with thick barriers.
引用
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页数:6
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