Growth of InI single crystals for nuclear detection applications

被引：15
|
作者：
Bhattacharya, P. [1 ]
Groza, M. [1 ]
Cui, Y. [1 ]
Caudel, D. [1 ]
Wrenn, T. [1 ]
Nwankwo, A. [1 ]
Burger, A. [1 ]
Slack, G. [2 ]
Ostrogorsky, A. G. [2 ]
机构：
[1] Fisk Univ, Nashville, TN 37208 USA
[2] Rensselaer Polytech Inst, Troy, NY 12180 USA
来源：
JOURNAL OF CRYSTAL GROWTH | 2010年 / 312卷 / 08期
基金：
美国国家科学基金会;
关键词：
Characterizations; Bridgman growth; Halides; Semiconducting indium compound;
D O I：
10.1016/j.jcrysgro.2009.12.021
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We have developed a procedure to purify, synthesize and grow InI single crystals using the Bridgman technique. The commercial product of InI from Alfa Aesar (99.998% InI or 4 N) was zone refined by 50 passes of a zone-heater at 420 degrees C, traveling at 2 cm/h (the melting point of InI is 360 degrees C). InI was also synthesized using high purity In and I-2 by vapor transport technique. The grown InI single crystal showed a clear band edge excitonic emission around 2.02 eV at 6 K using photoluminescence ;measurement. The resistivities of InI detectors were found to be similar to 2 x 10(9) and 1 x 10(8) Omega cm for zone refined and vapor synthesized starting materials, respectively. The InI detector formed by Pd-Pd contact showed clear peak of alpha particle detection at room temperature using Am-241 source. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：1228 / 1232
页数：5
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