Modeling of drain current, capacitance and transconductance in thin film undoped symmetric DG MOSFETs including quantum effects

被引：5

作者：

Mohammadi, Saeed ^{[1
]}

Afzali-Kusha, Ali ^{[1
]}

机构：

[1] Univ Tehran, Nanoelect Ctr Excellence, Sch Elect & Comp Engn, Tehran, Iran

来源：

MICROELECTRONICS RELIABILITY | 2010年 / 50卷 / 03期

基金：

美国国家科学基金会;

关键词：

THRESHOLD VOLTAGE; POISSON EQUATIONS; GATE; SCHRODINGER; INVERSION; CMOS;

D O I：

10.1016/j.microrel.2009.12.002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present a fast yet accurate semi-analytical model for the I-V and C-V characteristics of nanoscale undoped symmetric double gate (DG) MOSFETs. The model employs a parabolic potential approximation for the body potential in the coordinate normal to the interfaces in all regions of device operation. While carrier confinement phenomenon is taken into account, we calculate the surface electric field which is used to determine the inversion charge sheet density. The density is used in a compact classical model of the symmetric DG MOSFET as a core model. Some quantum effects which include the threshold voltage shift and effective oxide thickness increment are applied through some modifications to the core model. To assess the accuracy of the proposed model, the results of the model are compared to those of the numerical simulations. The comparison reveals the high accuracy of the proposed model. (C) 2009 Elsevier Ltd. All rights reserved.

引用

页码：338 / 345

页数：8

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