Wet etching for InAs-based InAs/Ga(As)Sb superlattice long wavelength infrared detectors

被引：9

作者：

Wu Jia ^{[1
,2
]}

Xu Zhi-Cheng ^{[1
]}

Chen Jian-Xin ^{[1
]}

He Li ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Key Lab Infrared Imaging Mat & Detector, Shanghai 200083, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

来源：

JOURNAL OF INFRARED AND MILLIMETER WAVES | 2019年 / 38卷 / 05期

基金：

中国国家自然科学基金;

关键词：

InAs/Ga(As)Sb; type-II superlattice; wet chemical etching; surface morphology; PHOTODETECTORS;

D O I：

10.11972/j.issn.1001-9014.2019.05.001

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Wet chemical etching of InAs-based InAs/Ga(As)Sb superlattice long wavelength infrared photodiodes was studied in this paper. The etching experiments using citric acid, orthophosphoric acid and hydrogen peroxide were carried out on InAs, GaSb bulk materials and InAs/Ga(As)Sb superlattices with different solution ratios. An optimized etching solution for the InAs-based superlattices has been obtained. The etched surface roughness is only 1 nm. InAs-based superlattice LWIR detectors with 50 % cut-off wavelength of 12 mu m were fabricated. The photodetectors etched with optimized solution ratio show low surface leakage characteristic. At 81 K temperature, the surface resistivity rho(Surface) of the detector is 4.4 x 10(3) Omega cm.

引用

页码：549 / 553

页数：5

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