Controlled resonant tunneling in a coupled double-quantum-dot system

被引:30
|
作者
Shinkai, Gou
Hayashi, Toshiaki
Hirayama, Yoshiro
Fujisawa, Toshimasa
机构
[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
[2] Tokyo Inst Technol, Tokyo 1528550, Japan
基金
日本学术振兴会;
关键词
D O I
10.1063/1.2709905
中图分类号
O59 [应用物理学];
学科分类号
摘要
The authors investigate electrostatic coupling between two double quantum dots (DQDs) defined in an AlGaAs/GaAs heterostructure by measuring the correlation between resonant tunneling currents through the DQDs. Resonant tunneling in one DQD can be controlled by the charge state of the other DQD. This controlled resonant tunneling is consistent with the capacitance model for the geometry and can be used to investigate the statistics of single-electron charge states in the DQD. The observed electrostatic coupling is strong enough to perform two-qubit quantum gates both for charge- and electron-spin-based qubit schemes. (c) 2007 American Institute of Physics.
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页数:3
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