A new closed-form expression for capacitive coupling of lossy substrate

被引：0

作者：

Gao, W ^{[1
]}

Yu, ZP ^{[1
]}

机构：

[1] Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China

来源：

2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new closed-form expression has been developed to model capacitive substrate coupling on RF CMOS chips. The electric wall approximation for the oxide-substrate interface is used in the model. The closed-form for single and multiple parallel on-chip interconnects are given. The methodology is applicable to some particular 3D cases.

引用

页码：1151 / 1154

页数：4

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