Texture etched ZnO:Al films as front contact and back reflector in amorphous silicon p-i-n and n-i-p solar cells

被引:13
|
作者
Rech, B [1 ]
Wieder, S [1 ]
Beneking, C [1 ]
Loffl, A [1 ]
Kluth, O [1 ]
Reetz, W [1 ]
Wagner, H [1 ]
机构
[1] Forschungszentrum Julich, ISI, PV, D-52425 Julich, Germany
关键词
D O I
10.1109/PVSC.1997.654165
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
This paper treats the use of texture etched ZnO:Al films in amorphous silicon solar cells. Chemically textured ZnO:Al films were implemented as a front TCO in p-i-n (superstrate) and n-i-p (substrate) solar cells, and in combination with Ag as a textured back reflector in n-i-p (substrate) solar cells. These cells exhibit excellent optical and light-trapping properties demonstrated by high short-circuit current densities. Adapted microcrystalline p-layers solve the ZnO/p-contact problem and thereby provide high fill factors and open-circuit voltages. The initial efficiencies so far obtained are close to 10 % for p-i-n and 8 % for n-i-p solar cells.
引用
收藏
页码:619 / 622
页数:4
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