Magnetoresistance effect and interlayer coupling of (Ga, Mn)As trilayer structures

被引：132
|
作者：
Chiba, D [1 ]
Akiba, N [1 ]
Matsukura, F [1 ]
Ohno, Y [1 ]
Ohno, H [1 ]
机构：
[1] Tohoku Univ, Elect Commun Res Inst, Lab Elect Intelligent Syst, Aoba Ku, Sendai, Miyagi 9808577, Japan
来源：
APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 12期
关键词：
D O I：
10.1063/1.1310626
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have investigated the magnetic and magnetotransport properties of (Ga, Mn)As/(Al, Ga)As/(Ga, Mn)As semiconductor-based magnetic trilayer structures. We observe a weak ferromagnetic interlayer coupling between the two ferromagnetic (Ga, Mn)As layers as well as magnetoresistance effects due to spin-dependent scattering and to spin-dependent tunneling. Both the coupling strength and the magnetoresistance ratio decrease with the increase of temperature and/or the increase of Al composition of the nonmagnetic (Al, Ga)As layer. (C) 2000 American Institute of Physics. [S0003-6951(00)00438-1].
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收藏
页码：1873 / 1875
页数：3
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