Inelastic electron tunneling spectroscopy for molecular detection

被引:1
|
作者
Zadeh, Yasaman Hamidi [1 ]
Durrani, Zahid A. K. [1 ]
机构
[1] Univ London Imperial Coll Sci Technol & Med, Dept Elect & Elect Engn, Opt & Semicond Device Grp, London SW7 2AZ, England
来源
关键词
VIBRATION SPECTRA; JUNCTIONS; MICROSCOPY;
D O I
10.1116/1.4897137
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Inelastic electron tunneling spectroscopy (IETS) [R. C. Jaklevic and J. Lambe, Phys. Rev. Lett. 17, 1139 (1966); R. G. Keil et al., Appl. Spectrosc. 30, 1 (1976); K. W. Hipps and U. Mazur, J. Phys. Chem. 97, 7803 (1993); U. Mazur et al., Anal. Chem. 64, 1845 (1992); P. K. Hansma, Tunneling Spectroscopy (Plenum, New York, 1982)] measurements are performed on Si nanowire (NW)/SiO2/Al NW tunnel junctions. The tunnel junction area is similar to 50 x 120 nm and tunneling occurs across a 10 nm thick SiO2 layer. IETS measurements are performed at 300K for ammonium hydroxide (NH4OH), acetic acid (CH3COOH), and propionic acid (C3H6O2) molecules. The I-V, dI/dV-V, and d(2)I/dV(2)-V characteristics of the tunnel junction are measured before and after the adsorption of molecules on the junction using vapor treatment or immersion. Peaks can be observed in the d(2)I/dV(2)-V characteristics in all the cases following molecules adsorption. These peaks may be attributed to vibrational modes of N-H and C-H bonds. (C) 2014 American Vacuum Society.
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页数:5
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