Vertical GaN nanocolumns grown on graphene intermediated with a thin AlN buffer layer (vol 30, 015604, 2018)

被引：0
|
作者：
Liudi Mulyo, Andreas [1 ,2 ]
Rajpalke, Mohana Krishnappa [1 ,5 ]
Kuroe, Haruhiko [2 ]
Vullum, Per-Erik [3 ]
Weman, Helge [1 ]
Fimland, Bjorn-Ove [1 ]
Kishino, Katsumi [2 ,4 ]
机构：
[1] Norwegian Univ Sci & Technol NTNU, Dept Elect Syst, NO-7491 Trondheim, Norway
[2] Sophia Univ, Dept Engn & Appl Sci, Tokyo 1028554, Japan
[3] SINTEF Ind, NO-7465 Trondheim, Norway
[4] Sophia Univ, Sophia Nanotechnol Res Ctr, Tokyo 1028554, Japan
[5] Univ Copenhagen, Niels Bohr Inst, Ctr Quantum Devices, DK-2100 Copenhagen, Denmark
来源：
NANOTECHNOLOGY | 2019年 / 30卷 / 04期
关键词：
D O I：
10.1088/1361-6528/aaef4a
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页数：1
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