The origin of ferromagnetism in Co-doped ZnO single crystalline films upon reducing annealings

被引:15
|
作者
Lu, Z. L. [1 ,2 ,3 ]
Bian, X. F. [1 ]
Zou, W. Q. [4 ,5 ]
Xu, M. X. [1 ]
Zhang, F. M. [4 ,5 ]
机构
[1] Southeast Univ, Dept Phys, Nanjing 210096, Peoples R China
[2] Natl Cheng Kung Univ, Dept Phys, Tainan 701, Taiwan
[3] Natl Cheng Kung Univ, IIAS, Tainan 701, Taiwan
[4] Nanjing Univ, Jiangsu Prov Lab Nanotechnol, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
[5] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China
基金
高等学校博士学科点专项科研基金; 美国国家科学基金会;
关键词
Co-doped ZnO; Diluted magnetic semiconductors; X-ray absorption fine structure; Single crystalline thin films; MAGNETIC SEMICONDUCTORS; SPINTRONICS; OXIDE;
D O I
10.1016/j.jallcom.2009.11.157
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
High-quality Zn0.95Co0.05O single crystalline films have been grown on a-plane sapphire substrates using molecular-beam epitaxy. The as-grown films show high resistivity and non-ferromagnetism at room temperature, and they become good conductive and ferromagnetic after annealing in Ar atmosphere or Ar(95%)/H-2(5%) mixed-gas. Compared with weak ferromagnetism (0.16 mu(B)/Co) in the Zn0.95Co0.05O film annealed in pure Ar atmosphere, the film annealed in the Ar/H-2 mixed-gas shows much stronger ferromagnetism (0.82 mu(B)/Co) at room temperature. For all of the samples, both of the X-ray diffraction and optical transmission spectrum analyses suggest the incorporation of Co2+ cations into wurtzite ZnO lattice. However, X-ray absorption studies based on synchronization radiation clearly indicate the presence of metallic Co clusters in the Zn0.95Co0.05O film upon thermal annealing in Ar/H-2 mixed-gas. Our work demonstrates that minor ferromagnetic phases below the detection limit of conventional characterization techniques may exist in the transition-metal doped ZnO films, especially grown and/or annealed in the reducing atmosphere, and be responsible for the observed ferromagnetism. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:31 / 34
页数:4
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