On-chip interconnects and repeaters based on NiSi nanowires

被引:0
|
作者
Wang, Wei [1 ]
Ari, Adam Maina [1 ]
Wong, Woon Ket [1 ]
机构
[1] Indiana Univ Purdue Univ, Dept Elect & Comp Engn, 723 W Michigan St, Indianapolis, IN 46202 USA
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中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this paper, a novel method is proposed for building future nanoelectronic on-chip interconnects and repeaters using the newly invented nickel silicide (NiSi) nanowires. NiSi nanowires not only offer supreme interconnect performances but also open up the possibility of integrating both active devices and high-performance interconnects in a single nanoscale building block. Thus, it is particularly useful in the integration of interconnects and repeaters. Our analyses show that this interconnect/repeater solution will operate in higher speed, compared with copper and carbon nanotube. This new interconnect/repeater technology is very promising for next-generation of nanoscale ICs.
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页码:100 / +
页数:2
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