Optical and structural studies of GaN epilayers

被引：0
|
作者：
Godlewski, M [1 ]
机构：
[1] Polish Acad Sci, Inst Phys, Dept Solid State Spect, PL-02668 Warsaw, Poland
来源：
PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II | 2000年 / 3975卷
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D O I：
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Optical properties of GaN epilayers grown on lattice mismatched substrates are discussed. In particular, we analyse the reasons for a relatively low efficiency of nonradiative recombination at dislocations and we demonstrate the influence of strong piezoelectric effects in GaN epilayers on the rate of radiative recombination. Properties of parasitic yellow emission of GaN are also discussed.
引用
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页码：165 / 170
页数：6
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