Rapid synthesis of Zn3(VO4)2 phosphor film on quartz substrate by RF magnetron sputtering and rapid thermal processing

The near-ultraviolet excited Zn-3(VO4)(2) phosphor film on a quartz substrate was fabricated by RF magnetron sputter deposition of the film at 150 degrees C or room temperature and subsequent rapid thermal calcination at 600-900 degrees C. The phosphor film exhibited a broad emission spectrum with a peak at 567 nm and a FWHM of 186 nm. The highest internal quantum efficiency of 45% was obtained after 800 degrees C calcination of the 150 degrees C-deposited film with a Zn/V molar ratio of 1.9. The 800 degrees C calcination promoted a thermal coalescence and effectively reduced surface traps of Zn-3(VO4)(2) particles. Zn-3(VO4)(2) was thermally decomposed into Zn4V2O9 and Zn2V2O7 at 900 degrees C, and the quantum efficiency decreased drastically as a consequence.