Bright room temperature near-infrared single-photon emission from single point defects in the AlGaN film

被引：8

作者：

Xue, Yingxian ^{[1
]}

Chen, Feiliang ^{[2
]}

Fang, Zhiyun ^{[1
]}

Zhang, Shiyu ^{[1
]}

Li, Qian ^{[2
]}

Li, Mo ^{[3
]}

Kang, Jianbin ^{[2
]}

Zhang, Jian ^{[3
]}

Shen, Si ^{[1
]}

Wu, Botao ^{[1
]}

Wu, E. ^{[1
,4
]}

机构：

[1] East China Normal Univ, State Key Lab Precis Spect, Shanghai 200241, Peoples R China

[2] China Acad Engn Phys, Microsyst & Terahertz Res Ctr, 596 Yin He Rd, Chengdu 610200, Peoples R China

[3] Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 610054, Peoples R China

[4] Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Shanxi, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2021年 / 118卷 / 13期

基金：

中国国家自然科学基金;

关键词：

Gallium alloys - Photons - Gallium nitride - Optical fibers - Semiconductor alloys - III-V semiconductors - Photonic devices - Infrared devices - Optical fiber communication - Particle beams - Room temperature - Aluminum alloys - Light transmission - Point defects;

D O I：

10.1063/5.0045506

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Near-infrared (NIR) single-photon source plays a key role in a wide range of applications in quantum technology. In particular, in quantum communication, the NIR wavelength operation perfectly matches the relatively low-attenuation transmission window of the optical fiber, which attracts more and more research interest. Here, we report the room temperature single-photon emission from single point defects in the aluminum gallium nitride (AlGaN) film. The obtained single-photon emission covers from 720 to 930nm and exhibits highly linear polarization and high photon brightness. This may provide a platform for future integrated on-chip quantum photonic devices.

引用

页数：5

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