ST-MRAM Fundamentals, Challenges, and Outlook

被引：0

作者：

Andre, T. ^{[1
]}

Alam, S. M. ^{[1
]}

Gogl, D. ^{[1
]}

Barkatullah, J. ^{[1
]}

Qi, J. ^{[1
]}

Lin, H. ^{[1
]}

Zhang, X. ^{[1
]}

Meadows, W. ^{[1
]}

Neumeyer, F. ^{[1
]}

Viot, G. ^{[1
]}

Hossain, F. ^{[1
]}

Zhang, Y. ^{[1
]}

Janesky, J. ^{[2
]}

DeHerrera, M. ^{[2
]}

Kang, B. ^{[1
]}

机构：

[1] Everspin Technol, Austin, TX 78759 USA

[2] Everspin Technol, Chandler, AZ USA

来源：

2017 IEEE 9TH INTERNATIONAL MEMORY WORKSHOP (IMW) | 2017年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Magnetoresistive Random Access Memory (MRAM) technology was introduced into the market last decade in the form of Toggle MRAM, available in densities up to 16Mb. In the last few years, Spin-Torque MRAM, the next generation of Magnetic Tunnel Junction (MTJ) based memory, has become available offering higher density and bandwidth. This paper describes the device and design fundamentals, the associated challenges, and the outlook of this evolving MTJ based memory.

引用

页码：161 / 164

页数：4

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