Electrical properties study of double porous silicon layers: Conduction mechanisms

被引：11
|
作者：
Jemai, R.
Alaya, A.
Meskini, O.
Nouiri, M.
Mghaieth, R.
Khirouni, K. [1 ]
Alaya, S.
机构：
[1] Fac Sci Gabes Cite Erriadh, Lab Phys Mat & Nanomat Appl Environm, Gabes 6079, Tunisia
[2] Fac Sci Monastir, Lab Phys Semicond & Composants Elect, Monastir 5018, Tunisia
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2007年 / 137卷 / 1-3期
关键词：
porous silicon; Schottky barrier; transport mechanism; admittance spectroscopy; hopping;
D O I：
10.1016/j.mseb.2006.12.003
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The electrical conduction properties of a heterostructure based on a stacked double-layer porous silicon structure have been investigated. Two layers of porous silicon (PS) with different porosities were inserted in an Au/PS/p:Si/Al structure. Transport properties of this structure have been investigated by current-voltage (I-V) and admittance spectroscopy measurements. From I-V characteristics and the band diagram of the structure, it was concluded that tunneling current is prevailing at low forward polarization. The temperature dependence of the conductance shows the existence of a hopping conduction in the PS layer. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：263 / 267
页数：5
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