Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition

被引：52
|
作者：
Brunhes, T
Boucaud, P
Sauvage, S
Aniel, F
Lourtioz, JM
Hernandez, C
Campidelli, Y
Kermarrec, O
Bensahel, D
Faini, G
Sagnes, I
机构：
[1] Univ Paris 11, Inst Elect Fondamentale, CNRS, UMR 8622, F-91405 Orsay, France
[2] STMicroelectronics, F-38926 Crolles, France
[3] CNRS, Microstruct & Microelect Lab, F-92220 Bagneux, France
[4] Ctr Natl Etud Telecommun, Lab CDP, CNRS, URA 250, F-92220 Bagneux, France
来源：
APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 12期
关键词：
D O I：
10.1063/1.1308526
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have fabricated light-emitting diodes on Si operating in the near-infrared. The active region of the p-i-n diodes consists of Ge/Si self-assembled quantum dots. The Ge islands were grown in an industrial 200 mm single-wafer chemical vapor deposition reactor. The photoluminescence and the electroluminescence of the islands are resonant in the spectral range around 1.4-1.5 mu m wavelength. The electroluminescence is observed up to room temperature. (C) 2000 American Institute of Physics. [S0003-6951(00)00437-X].
引用
收藏
页码：1822 / 1824
页数：3
相关论文
共 50 条
  • [1] Strain and composition of capped Ge/Si self-assembled quantum dots grown by chemical vapor deposition
    Patriarche, G
    Sagnes, I
    Boucaud, P
    Le Thanh, V
    Bouchier, D
    Hernandez, C
    Campidelli, Y
    Bensahel, D
    APPLIED PHYSICS LETTERS, 2000, 77 (03) : 370 - 372
  • [2] Ge Si self-assembled quantum dots grown on Si(001) in an industrial high-pressure chemical vapor deposition reactor
    Hernandez, C
    Campidelli, Y
    Simon, D
    Bensahel, D
    Sagnes, I
    Patriarche, G
    Boucaud, P
    Sauvage, S
    JOURNAL OF APPLIED PHYSICS, 1999, 86 (02) : 1145 - 1148
  • [3] InP and InAlP self-assembled quantum dots grown by metalorganic chemical vapor deposition
    Ryou, Jae-Hyun
    Dupuis, Russell D.
    Reddy, C.V.
    Narayanamurti, Venkatesh
    Mathes, David T.
    Hull, Robert
    Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2000, : 223 - 226
  • [4] InP and InAlP self-assembled quantum dots grown by metalorganic chemical vapor deposition
    Ryou, JH
    Dupuis, RD
    Reddy, CV
    Narayanamurti, V
    Mathes, DT
    Hull, R
    2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2000, : 223 - 226
  • [5] Self-assembled III-phospide quantum dots grown by metalorganic chemical vapor deposition
    Ryou, JH
    Chowdhury, U
    Dupuis, RD
    Reddy, CV
    Narayanamurti, V
    Mathes, DT
    Hull, R
    SELF-ORGANIZED PROCESSES IN SEMICONDUCTOR ALLOYS, 2000, 583 : 39 - 44
  • [6] Multilayer GaSb/GaAs self-assembled quantum dots grown by metalorganic chemical vapor deposition
    Motlan
    Butcher, KSA
    Goldys, EM
    Tansley, TL
    MATERIALS CHEMISTRY AND PHYSICS, 2003, 81 (01) : 8 - 10
  • [7] Photoluminescence of self-assembled Ge dots grown by ultra-high-vacuum chemical vapor deposition
    Boucaud, P
    Le Thanh, V
    Sauvage, S
    Debarre, D
    Bouchier, D
    Lourtioz, JM
    THIN SOLID FILMS, 1998, 336 (1-2) : 240 - 243
  • [8] Photoluminescence of self-assembled Ge dots grown by ultra-high-vacuum chemical vapor deposition
    Boucaud, P
    Le Thanh, V
    Sauvage, S
    Debarre, D
    Bouchier, D
    Lourtioz, JM
    THIN FILMS EPITAXIAL GROWTH AND NANOSTRUCTURES, 1999, 79 : 240 - 243
  • [9] Electron localization in self-assembled Si quantum dots grown on Ge(111)
    Stepina, N. P.
    Zinovieva, A. F.
    Zinovyev, V. A.
    Deryabin, A. S.
    Kulik, L. V.
    Dvurechenskii, A. V.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2015, 30 (12)
  • [10] Nanometer-scale InGaN self-assembled quantum dots grown by metalorganic chemical vapor deposition
    Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo, 106-8558, Japan
    Appl Phys Lett, 3 (383-385):
12345